Wrestling market share from silicon power devices
The SiC & GaN Power Semiconductor Market: Forecasts and Drivers
Richard Eden - IHS Markit
This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present up-to-date ten-year forecasts for the global markets, identifying where these technologies can compete with silicon in terms of device type and application. It will evaluate the likely key applications, presenting a mid-case scenario for both technologies depending on a number of factors. The SiC & GaN wafer substrate supply chain will be discussed. Finally, I will try to answer the question: what is needed to drive a faster ramp up of SiC and GaN revenues?
Shifting Gears: The “GaN-ification” of Automobiles
Philip Zuk - Transphorm
Automobile electrification is radically changing a long- entrenched industry. By 2025, semiconductor content is projected to increase by as much as 50 percent per vehicle. However, with internal vehicle system redesigns comes a hyper-focus on increased system efficiencies. Electric assist HEVs, PHEVs, and BEVs cannot be entirely supported by incumbent power electronics. Enter GaN: the wide bandgap semiconductor material surpassing historical power density, weight and performance metrics. Automobile manufacturers are turning from longstanding Tier 1 suppliers toward innovative power electronics companies using GaN. Learn which vehicle systems benefit most from GaN and how they allow for revolutionary automotive designs never before possible.
Exploiting the merits of GaN and SiC
Peter Friedrichs - Infineon
The contribution will a brief overview about latest developments carried out at Infineon related to WGB power devices. Included are progress in SiC MOSFETs and GaN HEMTS. Product definition considerations will be sketched as well as the resulting performance and reliability of the developed devices. An important aspect for the success of WBG components is the choice of the right package, therefore, a few examples will be given indicating the impact of the right housing choice. Finally, an initial assessment of the impact provided by SiC devices for various pilot applications will be discussed.
Status Updates: Volume Manufacturing of High Performance & Scalable GaN Power Devices on 8-inch Diameter QST® Platform
Cem Basceri - Qromis
While developers are making headway with GaN power devices and applications, the existing wafer sizes, yields, cost and performance scaling for both GaN switches and diodes have been limited for volume manufacturing ― creating obstacles for mainstream GaN adoption with competitive cost structure thereby preventing access to a much larger addressable market. As the result of significant R&D and pilot-line validation, Qromis’ solution to high volume, low cost and scalable GaN manufacturing is a specially-designed fab-friendly substrate material called “QST®” (Qromis Substrate Technology) which supports high quality GaN epitaxy layers (from a few microns to tens of microns thick) and high performance power device designs thereby paving the way to create a robust GaN power business with large products portfolio (100V to 1,500V lateral or vertical switches, diodes, ICs and more), all manufactured on the same 8-inch or 12-inch production platform. In this talk, status updates on QST®-based materials and device technologies, and the products development work, extending from 100V to 1,500V switches and diodes, will be presented. Also, a detailed review of the company’s 8-inch volume manufacturing status and the power device wafer foundry services for the industry players, in partnership with Vanguard International Semiconductor and Micron Technology, will be discussed.
Accelerating the commercial application of compound semiconductors
Andy Sellars - CS Catapult
This presentation will introduce the Compound Semiconductor Applications Catapult and will outline the Catapult’s aims for furthering compound semiconductor based research and product development, in areas including power electronics, RF and photonics. An overview of capabilities will be presented, together with how organisations can access support, equipment and facilities and find collaborators for developing and commercialising new compound semiconductor technologies, from materials and devices through to systems and end-user applications.
Fast-Loop Assessment of GaN/AlGaN Epitaxial Layers for Power Applications
Mohammed Alomari - IMS Chips
The different GaN wafer providers use different growth reactors, growth recipes and epitaxial layers design, all influencing the resulting device yield and characteristics. IMS CHIPS has developed a Fast-Loop routine, which within a short time enables the structural and electrical characterization of the GaN wafer, correlates the device yield to defects and electrical properties of the wafer, and feeds back reliability parameters to a physics based model which can be directly integrated in common circuit design tools. The results, in the shape of wafer maps, are also used by growth reactor manufacturers and epitaxial layer providers. The Fast-Loop routine thus enables better design and commercial planning for GaN devices, starting from the material source and up to device manufacturers.
Trimming the losses in GaN GITs
Hiroyuki Handa - Panasonic
High efficiency at high power density: realization of GaN's promise for power electronics
Tamara Baksht - VisIC Technologies
Finding solutions with heterogeneous integration
Presentation title to be confirmed.
Zhen Zong - Yole Développement
Building III/V-devices on CMOS-compatible Si (001)
Wolfgang Stolz - NAsP III-V
The challenges and the state-of-the-art of the monolithic integration of III/V-based device structures on 300mm CMOS-compatible silicon (001) wafers will be reviewed and discussed with respect to defect-free, lattice-matched GaP-on-silicon -templates. These unique GaP-on-silicon 300mm wafer templates form the ideal basis for the subsequent realization of advanced III/V-layer stacks for electronic as well as in particular for optoelectronic/laser/photonic device concepts based on the novel lattice-matched Ga(NAsP)-laser material. The monolithic integration concept of the lattice-matched III/V-stacks with standard silicon-CMOS-based micro- and nanoeletronics will be outlined.
Integrating III-V nanowires to advance CMOS system-on-a-chip technologies
Lars-Erik Wernersson - Lund University
Abstract coming soon
Dense integrating GaN power switches with CMOS drivers
Jean-Pierre Locquet - KU Leuven
Abstract coming soon
5G: Where are we and what's next?
Is 5G roll-out a certainty? And will it be good for GaAs and GaN?
Eric Higham - Strategy Analytics
Abstract coming soon
Building the industry's first 5G front-end
Roger Hall - Qorvo
MMICs - what is needed to get mmWave 5G to work?
Liam Devlin - Plextek RFI
5G is intended to offer a step change in data rates with seemingly infinite capacity, and this challenge can be addressed with a move to mm-wave frequencies where large contiguous bands of spectrum can be made available. Although the mm-wave bands for 5G will not finally be agreed until 2019, much development work is already underway, and numerous demonstrator systems are being designed, assembled and trialed. This presentation will discuss the likely mm-wave 5G bands, and will compare the semiconductor technologies and packaging options that could be used to implement the required mm-wave component functionality. Real-world examples of MMICs designed for 5G demonstrator systems will be presented.
LEDs: Magnifying margins
Revolutionising displays with MicroLEDs
Pars Mukish - Yole Développement
With the increasing success of OLED, and mounting interest in QLED, emissive technologies have already proven their worth and enabled a variety of consumer products with stunning display performance. But microLED could very be another disruptive display technology for a variety of applications. Since the acquisition of startup Luxvue by Apple in 2014 and that of InfiniLED by Facebook-Oculus last year, inorganic LEDs have generated a lot of attention.
Compared to existing LCD and OLED displays, microLEDs offer the promise of high brightness, dramatically reduced power consumption and improved image quality. MicroLED displays could serve the needs of and benefit most applications, spanning from wearable and mobile devices to AR/VR, TVs and even large video displays as demonstrated recently by Sony. So what’s missing? The science is here, but the success of the technology will depend on overcoming a variety of engineering and manufacturing challenges.
Horticultural lighting offers growth opportunities
Keith Strickland - Plessey Semiconductors
The monolithic full-colour LED and its applications
J.C.Chen - Ostendo Technologies
A full-color LED based on monolithic InGaN-based structures was demonstrated. Different wavelength lights can be obtained by simply adjusting input currents into the device. In addition to three primary colors, other colors can also be achieved by color mixing techniques. A simple growth process used in producing full-color LEDs makes it a practical technology for scalable manufacturing at low cost. This novel LED can replace three RGB LEDs used in current/future devices, such as color-temperature-control white LEDs or micro-LED displays. The manufacture complexity, therefore, can be significantly reduced. Other applications will be discussed too.
Improving LEDs with a Wafer Level Integrated Chip on PCB (WICOP) architecture
Andreas Weisl - Seoul Semiconductor
Abstract coming soon
Ramping revenues from RF devices
Defense Sector Trends and the Associated Market Outlook for Compound Semiconductors
Asif Anwar - Strategy Analytics
While there is always uncertainty around defense budgets, the recognition that technology has a direct impact on force effectiveness will translate into continued efforts to enhance capabilities across radar, EW, communications and other military systems. Off course no one technology will be the panacea for all requirements so incumbent vacuum technologies will continue to be used. However, it is clear that architectural changes supporting a move towards requirements such as broadband performance, higher frequencies and digitization will support use cases for compound semiconductor technologies, so we expect III-V content in military electronics to increase significantly over the coming years.
Wireless Charging with GaN Devices
Nick Cataldo - Efficient Power Conversion
The popularity of highly resonant wireless power transfer is increasing. This technology addresses consumer issues such as source-to-device distance, device orientation when being charged, simultaneous charging of multiple devices on a single source, and higher power capability – and it is safe to humans.
Magnetic resonant systems use loosely coupled coils tuned to high frequencies (6.78 MHz or 13.56 MHz), far beyond the capability of MOSFETs. Also, superior characteristics of GaN devices, such as low input/output capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency. This presentation will discuss the contribution GaN makes in wireless power applications.