Two days, five themes, over 30 inspiring presentations

Presentations are grouped into five key themes which collectively provide complete coverage of the compound semiconductor industry.

The Compound Semiconductor team are currently in the process of securing the leading industry insiders to present at CS International 2018.

If you are interested in speaking at CS International 2018, please contact or call +44 (0)24 76718970.

Speakers Include

Nick Cataldo
Richard Eden
Mohammed Alomari
Jean-Pierre Locquet
Lars-Erik Wernersson
Wolfgang Stolz
Hiroyuki Handa
Liam Devlin
Roger Hall
Andreas Weisl
Asif Anwar
Philip Zuk
Tamara Baksht
Pars Mukish

 5G: Where are we and what's next?


Is 5G roll-out a certainty? And will it be good for GaAs and GaN?

Eric Higham - Strategy Analytics

Abstract coming soon

Building the industry's first 5G front-end

Roger Hall - Qorvo

Awaiting abstract.

MMICs - what is needed to get mmWave 5G to work?

Liam Devlin - Plextek RFI

Awaiting abstract.

Presentation title to be confirmed.

Awaiting abstract.

 Wrestling market share from silicon power devices


The SiC & GaN Power Semiconductor Market: Forecasts and Drivers

Richard Eden - IHS Markit

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present up-to-date ten-year forecasts for the global markets, identifying where these technologies can compete with silicon in terms of device type and application. It will evaluate the likely key applications, presenting a mid-case scenario for both technologies depending on a number of factors. The SiC & GaN wafer substrate supply chain will be discussed. Finally, I will try to answer the question: what is needed to drive a faster ramp up of SiC and GaN revenues?

Shifting Gears: The “GaN-ification” of Automobiles

Philip Zuk - Transphorm

Automobile electrification is radically changing a long- entrenched industry. By 2025, semiconductor content is projected to increase by as much as 50 percent per vehicle. However, with internal vehicle system redesigns comes a hyper-focus on increased system efficiencies. Electric assist HEVs, PHEVs, and BEVs cannot be entirely supported by incumbent power electronics. Enter GaN: the wide bandgap semiconductor material surpassing historical power density, weight and performance metrics. Automobile manufacturers are turning from longstanding Tier 1 suppliers toward innovative power electronics companies using GaN. Learn which vehicle systems benefit most from GaN and how they allow for revolutionary automotive designs never before possible.    

Presentation title to be confirmed.

Mohammed Alomari - IMS Chips

Awaiting abstract.

Trimming the losses in GaN GITs

Hiroyuki Handa - Panasonic

Awaiting abstract.

High efficiency at high power density: realization of GaN's promise for power electronics

Tamara Baksht - VisIC Technologies

Awaiting abstract.

 LEDs: Magnifying margins


Revolutionising displays with MicroLEDs

Pars Mukish - Yole Développement

Abstract coming soon

Making monolithic LEDs, high-resolution displays

J.C.Chen - Ostendo Technologies

Awaiting abstract.

Improving LEDs with a Wafer Level Integrated Chip on PCB (WICOP) architecture

Andreas Weisl - Seoul Semiconductor

Abstract coming soon

 Finding solutions with heterogeneous integration


Presentation title to be confirmed.

- Yole Développement

Awaiting abstract.

Integrating III-V nanowires to advance CMOS system-on-a-chip technologies

Lars-Erik Wernersson - Lund University

Abstract coming soon

Dense integrating GaN power switches with CMOS drivers

Jean-Pierre Locquet - KU Leuven

Abstract coming soon

Building III/V-devices on CMOS-compatible Si (001)

Wolfgang Stolz - NAsP III-V

The challenges and the state-of-the-art of the monolithic integration of III/V-based device structures on 300mm CMOS-compatible Si (001) wafers will be reviewed and discussed with respect to defect-free, lattice-matched GaP-on-Si-templates. These unique GaP-on-Si 300mm wafer templates form the ideal basis for the subsequent realization of advanced III/V-layer stacks for electronic as well as in particular for optoelectronic/laser/photonic device concepts based on the novel lattice-matched Ga(NAsP)-laser material. The monolithic integration concept of the lattice-matched III/V-stacks with standard Si-CMOS-based micro- and nanoeletronics will be outlined. 

 Ramping revenues from RF devices


Defense Sector Trends and the Associated Market Outlook for Compound Semiconductors

Asif Anwar - Strategy Analytics

While there is always uncertainty around defense budgets, the recognition that technology has a direct impact on force effectiveness will translate into continued efforts to enhance capabilities across radar, EW, communications and other military systems. Off course no one technology will be the panacea for all requirements so incumbent vacuum technologies will continue to be used. However, it is clear that architectural changes supporting a move towards requirements such as broadband performance, higher frequencies and digitization will support use cases for compound semiconductor technologies, so we expect III-V content in military electronics to increase significantly over the coming years.

Wireless Charging with GaN Devices

Nick Cataldo - Efficient Power Conversion

The popularity of highly resonant wireless power transfer is increasing. This technology addresses consumer issues such as source-to-device distance, device orientation when being charged, simultaneous charging of multiple devices on a single source, and higher power capability – and it is safe to humans.

Magnetic resonant systems use loosely coupled coils tuned to high frequencies (6.78 MHz or 13.56 MHz), far beyond the capability of MOSFETs. Also, superior characteristics of GaN devices, such as low input/output capacitance, low parasitic inductances, and small size make them ideal for increasing efficiency. This presentation will discuss the contribution GaN makes in wireless power applications. 

*All speakers and presentations are subject to change.

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