Two days, five themes, over 30 inspiring presentations

Presentations were grouped into five key themes which collectively provided complete coverage of the compound semiconductor industry.

The CS International conference attracted industry leading experts from all the major companies involved in the compound semiconductor industry.

If you are interested in speaking at CS International 2019, please contact info@cs-international.net or call +44 (0)24 76718970.


2019 Speakers Include

Hiromi Fujita
Andy Sellars
Kai Cheng
Markus Behet
Edward Wasige
Marco Malinverni
Paul Wiener
Farid Medjdoub
Richard Eden
Norbert Lichtenstein
Bernadette Kunert
Gabriele Formicone
Valery Tolstikhin
Julie Orlando
Gong Xiao
Aly Mashaly
Masahiro Murayama
Eric Higham
David Danzilio
Ralf Lerner
Hong Lin


  Targeting transportation


Giving Formula E racing cars an edge with SiC

Aly Mashaly - ROHM Semiconductor

In automotive applications, requirements like space, weight and high efficiency play an increasing role. This leads to more demanding design requirements on the system and component level and ultimately affects the overall consistence of power devices, passive components, cooling technologies and PCBs. In consequence, Silicon Carbide (SiC) has become of higher interest in recent years. This presentation will focus on: SiC Technology and trends; the Benefit of SiC for the power train inverter, with a case study from Formula e racing car; and the benefit of utilizing SiC in personal vehicles (serial cars).



Improving electric vehicles with GaN

Paul Wiener - GaN Systems

Awaiting abstract.


  Pushing the performance envelope - Sponsored By


Making lasers on silicon

Bernadette Kunert - imec

Awaiting abstract.



Increasing the Power of Solid-State RF Amplifiers

Gabriele Formicone - Integra

The latest advances in GaN on SiC technology to increase the power of RF amplifiers for radars and other applications are reported. State-of-the-art discrete and pallet amplifier technology based on 50 VDC AlGaN/GaN HEMT on SiC is presented. Additionally, the latest efforts to increase power by exploring innovative transistor designs suitable for operation at 100-150 VDC are presented. Unlike 600 V GaN devices designed for low frequency DC-DC converters, the presentation addresses design goals for 600 V RF GaN transistor amplifiers capable of operating at 100-150 VDC in radar transmitters and other RF systems from UHF to L and S-band, and to C and X-band through additional innovations.



Superior superluminescent LEDs

Marco Malinverni - Exalos

Visible Superluminescent LEDs with red, green and blue (RGB) emission wavelengths are interesting light sources for display applications and architectures based on scanning MEMS mirrors, LCOS devices or holographic spatial modulators. EXALOS has developed efficient SLED devices at those primary colours over the past years. Here, we report on the improvement of the luminous and electro-optical efficiency of GaN-based SLEDs emitting in the green spectral range (λ > 500 nm). In addition, we present the results of blue and red SLEDs and discuss the challenges that still need to be tackled.


  Speeding communication


More data: More wireless or more fibre

Eric Higham - Strategy Analytics

Data traffic continues to increase at breakneck speed and emerging 5G applications are likely to quicken this pace. The challenge for service providers and network operators is the most cost effective way to move this data from point of origin to the end user without creating network bottlenecks that put the brakes on growth. This presentation will address some wireless and fiber network architectures that are evolving to support the data traffic explosion, looking at their advantages and disadvantages. We will also discuss the relative merits of different compound semiconductor technologies that will enable these architectures.



Supporting the build-out of 5G with our GaN-on-SiC process

David Danzilio - WIN Semiconductors

Awaiting abstract.



iBrow project

Edward Wasige - EU Project/IBROW Project

Awaiting abstract.



Targeting mm-wave communications with wafer-level integration of InGaAs HEMTs and silcion CMOS

Gong Xiao - National University of Singapore/MIT Alliance

Future millimetre-wave communication applications, such as 5G mobile and wireless, require circuits with superior performance, reduced interconnect power consumption, lower cost, and a smaller chip footprint. A promising technology enabler is the monolithic or heterogeneous integration of InGaAs HEMTs and Si CMOS to realize hybrid circuits that exploit the benefits of both III-V and Si platforms. In this talk, I will discuss our recent progress on the growth of various III-V layers with high quality and uniformity on large-scale Si substrate, fabrication of high performance InGaAs HEMTs with Si-CMOS compatible front-end process, and the realization of heterogeneous integration of InGaAs HEMTs with Si CMOS on the 200 mm Si substrate. 



Fabless PICs in InP: Why, What, and How?

Valery Tolstikhin - Intengent

As PICs in InP are gaining momentum, their areas of application multiply and end users move up in a food chain. PICs are becoming customized, while their development goes beyond the means of the users. Fabless model is emerging as a solution, but its advancement depends on whether it meets the needs for customization and scalability. The regrowth-free taper-assisted vertical integration (TAVI) is a versatile technology that allows to decouple epitaxial growth and wafer fabrication, such that continuous development into production of fully custom InP PICs is achievable by outsourcing both to industrial-grade foundries. Referring to the TAVI technology, the talk will review the status and prospects of the fabless PICs in InP.


  Propelling the power electronics revolution


Is the infrastructure in place to ramp SiC and GaN production?

Richard Eden - IHS Markit

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present the likely key applications, pricing trends, the supplier landscape and up-to-date ten-year forecasts by application for both technologies. It will identify which technologies can compete with silicon in terms of device type and likely adoption by end applications. The SiC & GaN wafer substrate supply chain will also be discussed. Finally, I will try to answer the question: Is the infrastructure in place to ramp up production of SiC and GaN power semiconductors?



Increasing the BV of GaN HEMTs

Farid Medjdoub - IEMN

Awaiting abstract.



Printing GaN HEMTs onto silicon CMOS

Ralf Lerner - X-Fab

Awaiting abstract.


  Opportunities for LED and lasers


Antimonide LEDs for gas sensing

Hiromi Fujita - Asahi Kasei

Awaiting abstract.



The tremendous opportunities for the VCSEL

Norbert Lichtenstein - II-VI

Awaiting abstract.



Mastering the manufacture of microLEDs on silicon

Kai Cheng - Enkris

Awaiting abstract.



Watt-class blue and green lasers

Masahiro Murayama - Sony Corporation

Awaiting abstract.


  Theme To Be Decided


Presentation Title TBC

- AIXTRON

Awaiting abstract.



Presentation Title TBC

- Attolight

Awaiting abstract.



Presentation Title TBC

- Beneq

Awaiting abstract.



Presentation Title TBC

Markus Behet - EpiGaN

Awaiting abstract.



Presentation Title TBC

- Evatec

Awaiting abstract.



Presentation Title TBC

- Ferrotec

Awaiting abstract.



Presentation Title TBC

- KLA-Tencor

Awaiting abstract.



Presentation Title TBC

- Nanometrics

Awaiting abstract.



Presentation Title TBC

Julie Orlando - Nanotronics

Awaiting abstract.



Presentation Title TBC

- Qorvo

Awaiting abstract.



Presentation Title TBC

- Nanowin

Awaiting abstract.



Presentation Title TBC

- Revasum

Awaiting abstract.



Presentation Title TBC

- Sino Nitride Semiconductor

Awaiting abstract.



Presentation Title TBC/Veeco

- Veeco

Awaiting abstract.



Presentation Title TBC

Hong Lin - Yole Développement

Awaiting abstract.



Presentation Title TBC

Andy Sellars - CS Catapult

Awaiting abstract.




*All speakers and presentations are subject to change.

Book your place today for 2018 - 3 events, 2 days, 1 ticket
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