Two days, five themes, over 30 inspiring presentations

Presentations were grouped into five key themes which collectively provided complete coverage of the compound semiconductor industry.

The CS International conference attracted industry leading experts from all the major companies involved in the compound semiconductor industry.

If you are interested in speaking at CS International 2019, please contact info@cs-international.net or call +44 (0)24 76718970.


2019 Speakers Include

Felix Grawert
Hiromi Fujita
Samuel Sonderegger
Mikko Soderlund
Andy Sellars
Liyang Zhang
Markus Behet
Edward Wasige
Thomas Uhrmann
Speaker Name TBC
Marco Malinverni
Phil Greene
Paul Wiener
Farid Medjdoub
Richard Eden
Norbert Lichtenstein
Bernardette Kunert
Mohammed Alomari
Gabriele Formicone
Valery Tolstikhin
Speaker Name TBC
Remi Comyn
Benoit Ravot
Julie Orlando
Ke Xu
Gong Xiao
David Lishan
Scott Vasquez
Cem Basceri
Speaker Name TBC
Aly Mashaly
Joe Wu
Masahiro Murayama
Eric Higham
Mark McKee
David Danzilio
Ralf Lerner
Hong Lin


  Targeting transportation - Sponsored By


Giving Formula E racing cars an edge with SiC

Aly Mashaly - ROHM Semiconductor

In automotive applications, requirements like space, weight and high efficiency play an increasing role. This leads to more demanding design requirements on the system and component level and ultimately affects the overall consistence of power devices, passive components, cooling technologies and PCBs. In consequence, Silicon Carbide (SiC) has become of higher interest in recent years. This presentation will focus on: SiC Technology and trends; the Benefit of SiC for the power train inverter, with a case study from Formula e racing car; and the benefit of utilizing SiC in personal vehicles (serial cars).



SiC and GaN adoption by EV/HEV market

Hong Lin - Yole Développement

EV/HEV market is booming and becoming the most important driving factor of power electronics market. The rapid growth has bring enormous market opportunity for Compound semiconductor, in particular Silicon Carbide (SiC) and Gallium Nitride (GaN) power devices, which have demonstrated large potential. Tesla’s adoption of SiC MOSFET in its vehicles excited the SiC community. On the other hand, GaN power devices manufacturers are preparing their entry into EV/HEV markets as well. In this presentation, we will give Yole’s analysis of SiC and GaN adoption by EV/HEV market. 



Improving electric vehicles with GaN

Paul Wiener - GaN Systems

The design challenge for tomorrow’s generation of electric vehicles continues to intensify with a clear focus on the search for maximizing range, faster charging, and lower cost electrification systems. Gallium Nitride (GaN) power transistors are a significant part of addressing these industry challenges by enabling the creation of smaller, lighter, lower cost, and more efficient power systems that are free from the limitations of yesterday’s silicon-based solutions. By effectively changing the rules of transistor power electronics for the auto industry, GaN technology will enable EV companies to not only create new game changing products for their own business, but in the end - revolutionize the entire transportation industry and transform the world.

During this session, attendees will learn and understand the details of how GaN technology is being used in automotive (specifically - review applications in charger, DC/DC and traction inverter) and other markets such as industrial aerospace, data centers and consumer electronics. The ROI of GaN technology - the maturity of the technology and the benefits that go beyond just the bill of material. This will be discussed through real life examples with data to support. The maturity of the GaN technology market at this point in time. 



  Pushing the performance envelope - Sponsored By


GaN on Si – A Key enabling technology for 5G

Markus Behet - EpiGaN

5G technology will bring new challenges for both carrier providers and handset manufacturers such as lower latency, high data rates and capacity as well as a significantly increased complexity in handset RF frontends. GaN technology and especially if integrated on low-cost and large-diameter Si substrates has the capability to address these challenges for 5G sub 6 GHz and mmW bands. EpiGaN has developed optimized RF GaN epiwafer solutions up to 200mm addressing the needs of these demanding 5G device applications. Learn about our latest GaN epiwafer product developments with lowest RF losses and dispersion fueling next generation 5G technology.



Extending performance in advanced packaging with low temperature, low damage plasma technologies

David Lishan - Plasma-Therm

“More than Moore” will utilize both innovative technologies and apply established technologies in new ways. Thin wafers and multi-chip packaging trends with the requisite precision, performance, reliability, die sizes/shapes, and costs are driving renewed interest in package integration. Front-end and back-end manufacturing is incorporating plasma etching and deposition processes with new materials, new layer structures, and substrates with a mindful eye on temperature and plasma damage. Creative plasma delivery and chemistries provide an opportunity ensure thermal and damage budgets are met.   We will discuss relatively low temperature, low damage dry etch and deposition solutions in a range of applications that include TSVs, wafer cleaning, surface activation/modification, conformal liners, and plasma dicing.   




Innovators in Power SiC

Remi Comyn - Knowmade

Patent literature is a mine of information to apprehend the competitive landscape and technology developments. With a focus on SiC MOSFETs, we will reveal the current innovators and their technical choices, in particular for trench gate SiC MOSFETs. We will discuss the most relevant patents which solve hot technical challenges.



III/V Nano-ridge Engineering for novel Device Integration on Si

Bernardette Kunert - imec

Meeting the high requirements of cost-efficiency and scalability in III/V integration on Si, the monolithic hetero-epitaxial growth is the most promising approach although facing the challenges of misfit defect formation due to the large lattice mismatch. Selective area growth of III/Vs in narrow trenches is a well-known method to achieve a high crystal quality. The pronounced growth out of trenches in line with an engineered nano-ridge shape is a unique integration approach introduced by imec. It leads to an enlarged III/V nano-ridge volume for novel device architectures. In this presentation I will explain this unique III/V nano-ridge engineering approach and evaluate the challenges and opportunities in epitaxial growth and new device design.




Increasing the Power of Solid-State RF Amplifiers

Gabriele Formicone - Integra

The latest advances in GaN on SiC technology to increase the power of RF amplifiers for radars and other applications are reported. State-of-the-art discrete and pallet amplifier technology based on 50 VDC AlGaN/GaN HEMT on SiC is presented. Additionally, the latest efforts to increase power by exploring innovative transistor designs suitable for operation at 100-150 VDC are presented. Unlike 600 V GaN devices designed for low frequency DC-DC converters, the presentation addresses design goals for 600 V RF GaN transistor amplifiers capable of operating at 100-150 VDC in radar transmitters and other RF systems from UHF to L and S-band, and to C and X-band through additional innovations.



Superior superluminescent LEDs

Marco Malinverni - Exalos

Visible Superluminescent LEDs with red, green and blue (RGB) emission wavelengths are interesting light sources for display applications and architectures based on scanning MEMS mirrors, LCOS devices or holographic spatial modulators. EXALOS has developed efficient SLED devices at those primary colours over the past years. Here, we report on the improvement of the luminous and electro-optical efficiency of GaN-based SLEDs emitting in the green spectral range (λ > 500 nm). In addition, we present the results of blue and red SLEDs and discuss the challenges that still need to be tackled.


  Speeding communication


More data: More wireless or more fibre

Eric Higham - Strategy Analytics

Data traffic continues to increase at breakneck speed and emerging 5G applications are likely to quicken this pace. The challenge for service providers and network operators is the most cost effective way to move this data from point of origin to the end user without creating network bottlenecks that put the brakes on growth. This presentation will address some wireless and fiber network architectures that are evolving to support the data traffic explosion, looking at their advantages and disadvantages. We will also discuss the relative merits of different compound semiconductor technologies that will enable these architectures.



GaN-on-SiC Technologies for 5G Radio Access

David Danzilio - WIN Semiconductors

Initial build-out of the 5G radio access network has commenced with sub-6GHz and mmWave infrastructure leveraging beamforming and MIMO architectures. These active antenna systems employ multiple RF chains, and a 5G modulation scheme requiring transmit power amplifiers operate at 10dB peak to average power ratio. This condition places a premium on Tx PA efficiency in back off, and the choice of semiconductor technology has a direct impact on access point coverage and operating costs. Gallium Nitride has achieved impressive levels of power performance, and is viewed as a viable PA technology for high EIRP scenarios. To satisfy the cost and performance objectives in this highly competitive market, WIN Semiconductors has commercialized GaN-on-SiC technologies to address both the sub-6GHz and mmWave bands. This presentation will discuss WIN’s view of the key GaN HEMT process attributes and performance targets required for 5G active antenna systems. 



Mm-wave/THz Multi-Gigabit Wireless Links – the iBROW Project

Edward Wasige - EU Project/IBROW Project

This talk will report on the iBROW (Innovative ultra-BROadband ubiquitous Wireless communications through terahertz transceivers) project, a European Commission (EC) funded Horizon 2020 project to develop a novel, energy-efficient and compact ultra-broadband short-range wireless communication transceiver technology, seamlessly interfaced with optical fibre networks and capable of addressing envisaged future network needs. On iBROW, resonant tunnelling diode (RTD) oscillators in chip form at both W-band and J-band with around 1 mW output power were demonstrated. These have been used in laboratory wireless experiments and have supported data rates of over 10 Gb/s over several metres with correctable bit-error-rate (BER) using simple amplitude shift keying (ASK). RTDs operate at room temperature, are compact, low power and can also be designed as photodetectors (PD). On iBROW, RTD-PDs have enabled microwave-photonic interfaces of up to 100 Mbaud optical data transmission using QPSK.



Targeting mm-wave communications with wafer-level integration of InGaAs HEMTs and silicon CMOS

Gong Xiao - National University of Singapore/MIT Alliance

Future millimetre-wave communication applications, such as 5G mobile and wireless, require circuits with superior performance, reduced interconnect power consumption, lower cost, and a smaller chip footprint. A promising technology enabler is the monolithic or heterogeneous integration of InGaAs HEMTs and Si CMOS to realize hybrid circuits that exploit the benefits of both III-V and Si platforms. In this talk, I will discuss our recent progress on the growth of various III-V layers with high quality and uniformity on large-scale Si substrate, fabrication of high performance InGaAs HEMTs with Si-CMOS compatible front-end process, and the realization of heterogeneous integration of InGaAs HEMTs with Si CMOS on the 200 mm Si substrate. 



Fabless PICs in InP: Why, What, and How?

Valery Tolstikhin - Intengent

As PICs in InP are gaining momentum, their areas of application multiply and end users move up in a food chain. PICs are becoming customized, while their development goes beyond the means of the users. Fabless model is emerging as a solution, but its advancement depends on whether it meets the needs for customization and scalability. The regrowth-free taper-assisted vertical integration (TAVI) is a versatile technology that allows to decouple epitaxial growth and wafer fabrication, such that continuous development into production of fully custom InP PICs is achievable by outsourcing both to industrial-grade foundries. Referring to the TAVI technology, the talk will review the status and prospects of the fabless PICs in InP.


  Propelling the power electronics revolution - Sponsored By

Direct wafer bonding for GaN devices

GaN based devices are emerging rapidly due to the advantageous material properties of very high breakdown voltages, high electron mobility and saturation velocity of GaN. This makes GaN ideally suited for high power electronics, RF transistors and optoelectronic devices. However, GaN typically has to be combined with other materials to achieve high performance on an economically viable level. Direct wafer bonding is a versatile technique to join two similar or dissimilar materials without restriction by crystallographic structure or orientation. It minimizes also the influence of lattice and thermal mismatch. As a result this manufacturing technology enables new integration schemes for combining GaN with various substrate materials. It offers a high flexibility by imposing strict quality requirements without impacting the crystal structure.



Presentation Title TBC

Julie Orlando - Nanotronics

Awaiting abstract.



Is the infrastructure in place to ramp SiC and GaN production?

Richard Eden - IHS Markit

This presentation will share key findings from the latest IHS Markit Technology report on Silicon Carbide and Gallium Nitride Power Semiconductors. It will present the likely key applications, pricing trends, the supplier landscape and up-to-date ten-year forecasts by application for both technologies. It will identify which technologies can compete with silicon in terms of device type and likely adoption by end applications. The SiC & GaN wafer substrate supply chain will also be discussed. Finally, I will try to answer the question: Is the infrastructure in place to ramp up production of SiC and GaN power semiconductors?



200mm GaN Power: Technology and Commercialization Status on QST Platform

Cem Basceri - Qromis

In this talk, the following status updates on QST-based materials and device technologies, and  the commercial products development work, including 200mm GaN-on-QST device foundry services by Vanguard International Semiconductor (VIS), will be presented: (1) 200mm diameter 100V to 1,800V GaN-on-QST® HEMT epitaxial layers in commercial MOCVD reactors, (2) highperformance normally-off p-GaN based GaN-on-QST® HEMT transistors fabricated in a 200mm CMOS fab yielding state-of-art characteristics with Vth of 2.8V among the best in class, (3) monolithic integration of 200mm GaN-on-QST® power devices with integrated drivers and  control logic gates in a 200mm CMOS fab for realizing GaN ICs with effective heat dissipation and no cross-talk issue, (4) next generation 600V-to-1,500V GaN JFETs and vertical GaN Schottky  barrier diodes, and (5) VIS’ 200mm GaN-on-QST® device foundry services for the industry players by utilising its existing low cost and robust CMOS manufacturing line.



Increasing the blocking voltage of GaN HEMTs

Farid Medjdoub - IEMN

GaN-based switches will offer greater efficiency, power handling, and compactness compared with the well-established, widely available silicon MOSFET power devices—all factors that are critical to meeting the needs of today’s systems. However, the vertical breakdown voltage of GaN-on-silicon heterostructures is currently limited to slightly above 1000 V, preventing this technology from benefiting higher voltage applications. This talk will discuss some potential solutions for next-generation, lateral GaN-on-silicon power devices targeting 1200 V and above. This would pave the way to a much lower on-resistance than other existing technologies operating above 1 kV. 




Printing GaN HEMTs onto silicon CMOS

Ralf Lerner - X-Fab

Integration of GaN high voltage transistors into Silicon CMOS could combine superior electrical parameters of GaN HEMTs and the huge logic functionality of Silicon CMOS. Several issues of a monolithic integration of GaN devices into CMOS like material mismatch and thermal budgets can be overcome by heterogeneous integration by micro-Transfer-Printing. This process includes a release etching of the GaN on silicon HEMT devices, mechanical printing of many devices in parallel followed by on-wafer metal wiring. Challenges like thermal heat removal and the required low resistive metallization have to be addressed. Results of printing experiments with small GaN HEMTs on Silicon CMOS will be presented.


  Opportunities for LED and lasers - Sponsored By


3D Imaging/Sensing: The next killer application for laser diodes?

Pars Mukish - Yole Développement

3D imaging/sensing is setting a new paradigm for human to device/system interaction. Such trend is currently booming in the consumer space with development of 3D face recognition features in smartphones (…) but the automotive market is also likely to experience significant growth in the next 5 years due to advanced driver assistance systems (ADAS) and autonomous driving (AD) efforts. This newly embedded technology is built around a complex set of sub-components assembled to provide scene understanding beyond the traditional 2D video. Depth perception in this market is a difficult task knowing the constrained cost, space and power considerations. In this field, laser diode technologies (including VCSELs and EELs) represent critical elements for 3D imaging/sensing device and module development.  During this presentation, we will present an analysis of opportunities for laser diodes in the 3D imaging/sensing business, remaining challenges to be handled by laser device manufacturers and impact of recent trends on market and industry. 




The Fabrication of High Quality Low Cost Free-standing GaN Substrates and GaN Templates

Joe Wu - Sino Nitride Semiconductor

Bulk GaN substrate has many advantages such as low dislocation density, high heat dissipation rate as well as no lattice mismatch and thermal mismatch for its homoepitaxial characteristics in applications like short wavelength light-emitting diodes, blue or green light laser diodes, high power electronics and microwave devices compared to their foreign substrates. By introducing two new technologies-the substrate separation and acid wet aching, high quality 2-inch bulk GaN wafer with dislocation density of 5×105 cm-2 was obtained by HVPE homoepitaxy. The result showed that the FWHM of the (002) and (102) rocking curves achieved . 

39.9 arcsec and 47.5 arcsec respectively, indicating their high degree of crystalline quality. Furthermore, the roughness of the final wafer is 0.11nm and the total thickness variation is below 15um. Also, we launched 4-inch free-standing GaN substrates with dislocation density below 5×106cm-2 at the beginning of this year.  We have developed a large-scale HVPE system which can produce 21 2-inch wafers  per run and substantially reduced the production cost. It is the largest reported HVPE system all over the world. In order to settle the problem of thickness uniformity、growth rate and surface defect, we simulated the flow field of the HVPE system with different reactor and equipment structure using SolidWorks and Fluent. By modifying the reactor and furnace structure, now we succeed to produced 21 wafers of 2-inch with good thickness uniformity and smooth surface. And the growth rate has achieved 100um/h. 




Accelerating Photonics Growth through Advances in High Performance As/P MOCVD and Wet Processing Technology

Mark McKee - Veeco

Photonics devices based on Arsenic/Phosphide (As/P) materials such as VCSELs and EE lasers are seeing high demand in 3D sensing, LiDAR, data communication, infrared illumination and fiber pumping. Double-digit growth over the next five years is expected as existing applications proliferate and new applications become available [1]. Manufacturers of photonics devices rely on Metal Organic Chemical Vapor Deposition (MOCVD), Lithography, and Wet Processing technology and equipment for their device production needs. As the critical first step in device manufacturing, MOCVD epitaxial growth technology must lead the way to meet growing customer demand for tighter performance requirements by improving compositional uniformity and dopant control while reducing cost-per-wafer via higher productivity, best-in-class yields and lower operating expenses. For epitaxy growth in VCSELs, key parameters are excellent within-wafer, wafer-to-wafer and run-to-run thickness uniformity of the DBR and MQW layers as well as the Fabry-Perot cavity dip uniformity. Equally important for VCSELs are the compositional and doping uniformity as well as background carbon and oxygen levels. The epitaxy films must also have very low defectivity. The above also holds true for EE lasers, except they do not include DBR layers. This presentation will use data to demonstrate how device manufacturers can use a new As/P MOCVD platform to achieve excellent uniformity and repeatability over long campaigns. Wet Processing is also critical for these photonics applications as the epitaxy layers must be patterned in the production process. Patterning is done using wet etch and metal lift off (MLO). Critical parameters for wet etch include etch uniformity and endpoint detection. Highly uniform film layers enable superior device performance and yield. In addition, a production-proven solvent-based process for MLO and photoresist strip steps is required to create the pad layers. This presentation will also show how immersion followed by spray enables complete removal for difficult to remove resists at high throughput.



Antimonide LEDs for gas sensing

Hiromi Fujita - Asahi Kasei

Unlike visible to near-infrared light, mid-infrared (mid-IR) light has attracted much less attention within the compound semiconductor community, due to limited commercial applications. However, the situation is changing. Following the recent concern surrounding global warming, technologies for monitoring and reducing greenhouse gases, such as carbon dioxide (CO2) and methane (CH4), are attracting a lot of attention. Among them, gas sensing technology based on mid-IR light absorption can take an important role. Antimonide LEDs and sensors, which have a narrow-bandgap and work in the mid-IR region, are ideal light sources and detectors for such application. In this presentation, recent progress in antimonide devices will be reported.



The tremendous opportunities for the VCSEL

Norbert Lichtenstein - II-VI

Historically VCSEL have addressed mostly niche applications such as simple sensing of gases or in oscillators of atomic clocks. With the application in datacom for short reach connections in data centers or smart cables first high volume applications have been arising. Now new applications such as the upcoming smart touch interfaces, people detection, face recognition or 3D scanning are completely changing the human-machine interface. The implementation of these applications in a plurality of compact consumer devices such as smartphones and tablets, TV, PCs & notebooks, virtual reality devices, smart home / IoT, automotive & drones or gaming only is possible by the exceptional properties of the VCSEL such as efficiency, temperature stability and high volume manufacturability. Future applications are expected in autonomous driving and going forward in augmented and virtual reality. 



Mastering the manufacture of microLEDs on silicon

Liyang Zhang - Enkris

For micro LED displays, monolithic integration of arrays is a preferable approach to producing high-resolution displays, because it can directly transfer a processed LED wafer to a target backplane through wafer-bonding technology. For this approach, production ideally involves the use of large, flat epi-wafers with a narrow wavelength bin range and a low defect level. These characteristics are critical to improve the final yield. GaN-on-silicon technology offers tremendous potential to address these epitaxy requirements over incumbent sapphire technology. Our recent progress on the growth of GaN-on-silicon epiwafer for micro LED displays will also be discussed



Watt-class blue and green lasers

Masahiro Murayama - Sony Corporation

High-power visible laser diodes have recently attracted a great deal of attention as light sources for display applications such as high brightness and large-sized projectors. We present high-power and high-efficiency blue and green lasers which were fabricated on free standing c-plane and semipolar {20-21} GaN substrates, respectively. We have successfully achieved more than 5 W output power operation for our 465 nm-blue lasers and 2 W for our 530 nm-green ones. These lasers are promising light sources for future laser display applications meeting the ITU-R Recommendation BT.2020.


  Theme To Be Decided

Presentation Title TBC - Class One Technology

Awaiting abstract.



Presentation Title TBC

Felix Grawert - AIXTRON

Awaiting abstract.



Presentation Title TBC

Samuel Sonderegger - Attolight

Awaiting abstract.



Presentation Title TBC

Mikko Soderlund - Beneq

Awaiting abstract.



Presentation Title TBC

Speaker Name TBC - Evatec

Awaiting abstract.



Presentation Title TBC

Phil Greene - Ferrotec

Awaiting abstract.



Presentation Title TBC

Speaker Name TBC - KLA-Tencor

Awaiting abstract.



Presentation Title TBC

Benoit Ravot - Nanometrics

Awaiting abstract.



Presentation Title TBC - IMS Chips

Mohammed Alomari - IMS Chips

Awaiting abstract.



Presentation Title TBC

Scott Vasquez - Qorvo

Awaiting abstract.



Presentation Title TBC

Ke Xu - Nanowin

Awaiting abstract.



Presentation Title TBC

Speaker Name TBC - Revasum

Awaiting abstract.



Presentation Title TBC

Andy Sellars - CSA Catapult

Awaiting abstract.




*All speakers and presentations are subject to change.

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