Two days, five themes, over 30 inspiring presentations

Presentations are grouped into five key themes which collectively provide complete coverage of the compound semiconductor industry.

Abstracts can be viewed by clicking here.

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CONFERENCE NETWORKING DRINKS RECEPTION - MONDAY 6TH MARCH 2017

The organisers of the CS International Conference, in association with IQE plc, invite you to a networking drinks reception, held from 19:00 until 22:00.
This will be held at Satellite 6 and 7 at the Sheraton Brussels Airport Hotel.




Day 1 - Tuesday 7th March 2017
Start Finish Speaker Presentation Title
08:00 08:50 REGISTRATION - Including tea/coffee
08:50 09:00 HOUSEKEEPING - Andrew Nelson, Conference Chair

Refining communication technologies

09:00 09:25 Zach Griffith, Teledyne Technologies
Keynote
InP HBTs for high-power 70 to 500 GHz amplification: Its status today and where it is going
09:25 09:45 Asif Anwar, Strategy Analytics
Analyst
The foundry of the 2020's
09:45 10:05 Dylan Kelly, Murata The All-Silicon Handset—Transforming the Vision into a Reality
10:05 10:25 Bernd Heinz, Evatec Al(1-x)ScxN films for use in RF devices
10:25 10:45 David Danzilio, WIN Semiconductors Advancing GaAs Integration
10:45 11:15 COFFEE BREAK

Exploiting heterogeneous integration

11:15 11:40 Daniel Green, DARPA
Keynote
Advancing technology with heterogeneous integration
11:40 12:00 Soon-Fatt Yoon, Nanyang Technological University Heterogeneous integration of III-V devices on Silicon with ultra-thin buffer utilising interfacial misfit dislocations
12:00 12:20 Jesus A Del Alamo, Microsystems Technology Laboratories Refining the III-V finFET
12:20 12:40 Nadine Collaert, imec Looking for the ultimate low-power switch: the promise of tunnel FETs
12:40 13:40 LUNCH BREAK
13:40 14:00 Veeresh Deshpande, IBM Advancing CMOS and going beyond, with III-V channels
14:00 14:20 Shengkai Wang, Institute of Chinese Academy of Sciences III-Vs and germanium for future logic
14:20 14:40 Arnaud Furnemont, imec 3D NAND scaling: an opportunity for alternative channel materials
14:40 15:00 Gerard Colston, Advanced Epi Materials & Devices Silicon carbide heteroepitaxy for mass production of semiconductor devices
15:00 15:20 Julie Orlando, Nanotronics Leveraging Computer Vision, Machine Learning, & Artificial Intelligence to Assign Causality of Defects
15:20 15:40 Reinhard Windemuth, Panasonic Solutions for wafer-level packaging
15:40 16:00 AFTERNOON TEA

Optimising light emitters  - Sponsored By

16:00 16:25 Hsu Chen Ke, Sanan Optoelectronics
Keynote
Creating the biggest and best LED chipmaker in China
16:25 16:45 Oleg Shchekin, Lumileds Non-linear processes in LEDs and engineering for efficiency at high power densities
16:45 17:05 Martin Behringer, OSRAM Opto Semiconductors LED - more than just a light emitting cube
17:05 17:25 Tatsushi Hamaguchi, Sony Corporation Fulfilling the promise of the GaN VCSEL
17:25 17:45 Bedwyr Humphreys, Seren Photonics Overcoming the green gap using semi-polar GaN
17:45 17:55 CLOSING REMARKS - Andrew Nelson, Conference Chair
17:55 18:15 CS INDUSTRY AWARDS
18:15 Late NETWORKING BUFFET AND DRINKS



Day 2 - Wednesday 8th March 2017
Start Finish Speaker Presentation Title
08:00 08:50 REGISTRATION - Including tea/coffee
08:50 09:00 HOUSEKEEPING - Andrew Nelson, Conference Chair

Revolutionising Gallium Nitride RF chips

09:00 09:25 John Palmour, Wolfspeed
Keynote
GaN-on-SiC RF: Poised for rapid adoption
09:25 09:45 Zhen Zong, Yole Développement
Analyst
GaN RF industry: landscape and future evolution
09:45 10:05 Rocco Giofrè, University of Rome Tor Vergata GaN Doherty amplifiers for backhaul radio links
10:05 10:25 Michael Ziehl, MACOM The virtues of GaN-on-silicon
10:25 10:50 COFFEE BREAK

Perfecting power electronics

10:50 11:15 Toshimi Hitora, FLOSFIA
Keynote
Unleashing the potential of gallium oxide
11:15 11:35 Sudhakar Raman, Veeco Enabling 5G RF-GaN Electronics through Innovative MOCVD Technology
11:35 11:55 John Voltz, Ferrotec Bigger wafers for heterogenous devices?
11:55 12:15 Cem Basceri, Quora Technology 8-inch Diameter High voltage GaN power device wafers enabling unmatched cost, performance and application scale
12:15 12:35 Edwin Chew, KLA-Tencor SiC and GaN Defect Inspection for Power Device Market
12:35 12:55 Jens Voigt, AIXTRON Establishing the tool-of-record for wide bandgap device manufacturing
12:55 13:45 LUNCH BREAK
13:45 14:05 Torsten Stoll, Nanometrics Study of Deep Ultra Violet Optical Property of AlGaN/GaN 2DEG Heterostructures
14:05 14:25 Markus Behet, EpiGaN From Hype to Reality: GaN/Si - where are we today?
14:25 14:45 Ke Xu, Nanowin Bulk GaN substrate grown by HVPE
14:45 15:05 Presentation to be announced
15:05 15:25 Frédéric Dupont, Exagan Driving the GaN Power Device roadmap for large scale adoption
15:25 15:45 Sujit Banerjee, Monolith Semiconductor Slashing chip costs with SiC-on-silicon
15:45 16:05 Isik Kizilyalli, ARPA-E Current topics in electronic devices based on wide band-gap semiconductors for power applications and energy efficiency
16:05 16:15 CLOSING REMARKS - Andrew Nelson, Conference Chair

Please Note: CS International reserves the right to make any necessary changes to this agenda. Every effort will be made to keep presentations and speakers as represented. However, unforeseen circumstances may result in the substitution of a presentation topic or speaker. CS International reserves the right to use photographs of any attendee for future promotions.